TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 1 toshiba photocoupler gaas ired & photo ? transistor TLP620, TLP620 ? 2, TLP620 ? 4 programmable controllers ac / dc ? input module telecommunication the toshiba TLP620, ? 2 and ? 4 consists of a photo ? transistor optically coupled to two gallium arsenide infrared emitting diode connected in inverse parallel. the TLP620 ? 2 offers two isolated channels in an eight lead plastic dip, while the TLP620 ? 4 provides four isolated channels in a sixteen plastic dip. collector ? emitter voltage: 55v (min.) current transfer ratio: 50% (min.) rank gb: 1 00% (min.) pin configurations (top view) TLP620 1 2 4 3 1 : anode cathode 2 : cathode anode 3 : emitter 4 : collector 1 2 4 3 5 6 7 8 TLP620-2 1 , 3 : anode cathode 2, 4 : cathode anode 5, 7 : emitter 6, 8 : collector TLP620-4 1 2 4 3 5 6 7 8 9 1 0 11 1 2 1 3 1 4 1 5 1 6 1 , 3, 5, 7 : anode, cathode 2, 4, 6, 8 : cathode, anode 9, 11 , 1 3, 1 5 : emitter 1 0, 1 2, 1 4, 1 6 : collector toshiba 11 ? 5b2 weight: 0.26 g toshiba 11 ? 1 0c4 weight: 0.54 g toshiba 11 ? 20a3 weight: 1 . 1 g unit in mm
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 2 made in japan made in thailand ul recognized e67349 * 1 e 1 52349 * 1 bsi approved 7426, 7427 *2 7426, 7427 *2 * 1 ul 1 577 *2 bs en60065: 1 994, bs en60950: 1 992 isolation voltage: 5000v rms (min.) option (d4) type vde approved: din vde0884 / 06.92, certificate no. 68384 maximum operating insulation voltage: 890v pk highest permissible over voltage: 8000v pk (note) when a vde0884 approved type is needed, please designate the ?option(d4)?. creepage distance: 6.4mm (min.) clearance: 6.4mm (min.) insulation thickness: 0.4mm (min.) maximum ratings (ta = 25c) rating characteristic symbol TLP620 TLP620 2 TLP620 4 unit forward current i f (rms) 60 50 ma forward current derating ? i f / c 0.7 (ta 39c) 0.5 (ta 25c) ma / c pulse forward current i fp 1 ( 1 00s pulse, 1 00pps) a power dissipation ( 1 circuit) p d 1 00 70 mw power dissipation derating ? p d / c 1 .0 0.7 mw / c led junction temperature t j 1 25 c collector emitter voltage v ceo 55 v emitter collector voltage v eco 7 v collector current i c 50 ma collector power dissipation ( 1 circuit) p c 1 50 1 00 mw collector power dissipation derating ( 1 circuit) (ta 25c) ? p c / c 1 .5 1 .0 mw / c detector junction temperature t j 1 25 c storage temperature range t stg 55~ 1 25 c operating temperature range t opr 55~ 1 00 c lead soldering temperature t sold 260 ( 1 0s) c total package power dissipation p t 250 1 50 mw total package power dissipation derating (ta 25c, 1 circuit) ? p t / c 2.5 1 .5 mw / c isolation voltage bv s 5000 (ac, 1 min., rh 60%) v rms
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 3 recommended operating conditions characteristic symbol min. typ. max. unit supply voltage v cc D 5 24 v forward current i f (rms) D 1 6 20 ma collector current ic D 1 1 0 ma operating temperature t opr 25 D 85 c individual electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 1 0ma 1 .0 1 . 1 5 1 .3 v foward current i f v f = 0.7v D 2.5 20 a led capacitance c t v = 0, f = 1 mhz D 60 D pf collector emitter breakdown voltage v (br) ceo i c = 0.5ma 55 D D v emitter collector breakdown voltage v (br) eco i e = 0. 1 ma 7 D D v v ce = 24v D 1 0 1 00 na collector dark current i ceo v ce = 24v, ta = 85c D 2 50 a detector capacitance (collector to emitter) c ce v ce = 0, f = 1 mhz D 1 0 D pf coupled electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit 50 D 600 current transfer ratio i c / i f i f = 5ma, v ce = 5v rank gb 1 00 D 600 % D 60 D saturated ctr i c / i f (sat) if = 1 ma, v ce = 0.4v rank gb 30 D D % i c = 2.4ma, i f = 8ma D D 0.4 D 0.2 D collector emitter saturation voltage v ce (sat) i c = 0.2 ma, i f = 1 ma rank gb D D 0.4 v off state collector current i c (off) v f = 0.7v, v ce = 24v D 1 1 0 a ctr symmetry i c (ratio) i c (i f = 5ma) / i c (i f = +5ma) 0.33 1 3 D
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 4 isolation characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit capacitance input to output c s v s = 0, f = 1 mhz D 0.8 D pf isolation resistance r s v s = 500v 1 1 0 1 2 1 0 1 4 D ? ac, 1 minute 5000 D D ac, 1 second, in oil D 1 0000 D v rms isolation voltage bv s dc, 1 minute, in oil D 1 0000 D v dc switching characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit rise time t r D 2 D fall time t f D 3 D turn on time t on D 3 D turn off time t off v cc = 1 0v i c = 2ma r l = 1 00 ? D 3 D s turn on time t on D 2 D storage time t s D 1 5 D turn off time t off r l = 1 .9k ? (fig. 1 ) v cc = 5v, i f = 1 6ma D 25 D s fig. 1 switching time test circuit i f r l v cc v ce v ce t on i f t off v cc 4.5v 0.5v t s
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 5 TLP620-2 TLP620-4 i f ? ta ambient temperature ta (c) allowable forward current i f (rms) (ma) 1 00 0 20 60 40 0 20 40 60 80 1 00 80 20 1 20 TLP620 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 240 20 40 1 60 0 60 1 00 1 20 0 80 200 1 20 20 40 80 TLP620-2 TLP620-4 p c ? ta ambient temperature ta (c) allowable collector power dissipation p c (mw) 1 20 0 20 40 0 40 1 00 80 60 20 20 60 80 1 00 1 20 TLP620 i fp ? d r duty cycle ratio d r allowable pulse forward current i fp (ma) 3000 1 0 3 1 0 3 1 0 2 1 0 1 3 30 300 1 00 1 000 500 50 3 3 1 0 0 pulse width Q 1 00s ta = 25c TLP620-2 TLP620-4 i fp ? d r duty cycle ratio d r allowable pulse forward current i fp (ma) 3000 1 000 500 300 1 00 50 30 1 0 3 1 0 3 3 1 0 2 3 1 0 0 pulse width Q 1 00s ta = 2 5 c 1 0 1 3 TLP620 i f ? ta ambient temperature ta (c) allowable forward current i f (rms) (ma) 0 20 80 40 20 0 20 40 60 80 1 00 60 1 00 1 20
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 6 ? v f / ? ta ? i f forward current i f (ma) forward voltage temperature coefficient ? v f / ? ta (mv / c) 1 2.8 2.4 2.0 1 .6 1 .2 0.8 0.4 0. 1 0.3 3 1 0 30 i d ? t a ambient temperature ta (c) collector dark current i d (a) 0 40 80 1 20 1 60 1 0 1 1 0 0 1 0 1 1 0 2 1 0 3 1 0 4 v ce = 24v 1 0 5 i fp ? v fp pulse forward voltage v fp (v) pulse forward current i fp (ma) 1 000 500 300 1 00 0 0.4 0.8 1 .2 1 .6 2.0 50 30 1 0 5 3 1 2.4 pulse width Q 1 0s repetitive frequency = 1 00hz ta = 25c collector current i c (ma) i c ? v ce collector-emitter voltage v ce (v) collector current i c (ma) 80 60 40 20 0 0 2 4 8 6 1 0 ta = 25c 50ma 1 0ma 30ma 20ma 1 5ma i f = 5ma p c (max.) i f ? v f forward voltage v f (v) forward current i f (ma) 1 00 50 30 1 0 5 3 0. 1 0.4 0.6 0.8 1 .0 1 .2 1 .4 1 .6 1 0.5 0.3 ta = 25c i c ? v ce collector-emitter voltage v ce (v) 25 20 1 5 1 0 0 0 0.2 0.4 0.6 0.8 1 .0 1 .2 1 .4 5 ta = 25c 50ma 40ma 30ma 20ma 1 0ma 5ma i f = 2ma
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 7 v f ? i f forward voltage v f (v) forward voltage i f (ma) 60 3 40 20 0 20 40 2 1 0 1 2 3 ta = 25c 500 300 50 30 5 0.3 1 3 1 0 30 1 00 ta = 25c v ce = 5v v ce = 0.4v 1 00 1 0 sample b sample a i c / i f ? i f forward current i f (ma) current transfer ratio i c / i f (%) i c ? v f forward voltage v f (v) collector current i c (ma) 1 00 0.03 0.8 1 .3 50 30 1 0 5 3 1 0.5 0.3 0. 1 0.05 0.0 1 0.9 1 .0 1 . 1 1 .2 ta = 25c v ce = 0.4v 1 0 5 i c ? i f forward current i f (ma) collector current i c (ma) 1 00 0.5 0.3 1 00 50 30 1 0 5 3 1 0.3 0. 1 0.05 0.03 1 3 1 0 30 ta = 25c v ce = 5v v ce = 0.4v sample b sample a
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 8 i c ? ta ambient temperature ta (c) 1 00 50 30 1 20 0 20 40 80 1 00 1 0 5 3 0.5 0.3 0. 1 60 v ce = 5v i f = 25ma 1 0 5 1 0.5 collector current i c (ma) 1 000 500 300 30 1 00 50 1 0 1 3 1 030 1 00 5 3 1 ta = 2 5 c i f = 1 6ma v cc = 5v t off t s t on r l ? switching time load resistance r l (k ? ) switching time (s) v ce (sat) ? ta ambient temperature ta (c) collector-emitter saturation voltage v ce (sat) (v) 20 0 20 40 60 80 1 00 0.20 0. 1 6 0. 1 2 0.04 0 0.24 0.08 i f = 5ma i c = 1 ma i f v cc r l v ce r be i f v ce t on t s t off 0.5v 4.5v 5v t on , t off , t s test condition
TLP620,TLP620 ? 2,TLP620 ? 4 2002-09-25 9 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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